Synthesis and Characterization of High Dielectric Constant Material CaCu3Ti4O12 by Anshuman Srivastava in BJSTR
Abstract
Today a lot of advancement is taking place in electronics industry.
This advancement is concomitant with the creation of new materials
with high permittivity (called high-k dielectric materials). A higher k
dielectric material can store more electric energy than the one with a
lower value. As a result, its use in electronic devices reduces the size
of the components and improves their efficiency also. As Capacitor is
one
of the most important components of electronic devices, so lot of
research is going on to reduce its size. Traditional BaTiO3
based ferroelectric
materials exhibit high dielectric constant. There is a problem with
these materials as these have strong temperature dependence of their
dielectric constants near ferro to para electric transition. Therefore,
CaCu3Ti4O12 (CCTO) has attracted increasing scientific and technological
interest because of its giant dielectric constant (εr~104)
with weak temperature/frequency dependence in a wide range of
temperature
(100–600K) and frequency. This suggests its potential application in
capacitor based devices. In the present work, Solid state conventional
technique was adopted for the synthesis of CaCu3Ti4O12 (CCTO), using CuO, TiO2, and CaCO3 as starting materials. X-ray diffraction patterns were recorded in an X-ray diffractometer employing Cu-Kα
radiation with a Ni-filter. SEM was recorded to analyze the
microstructure. Dielectric
measurement has been performed using four probe novocontrol set up (ZG4)
in a wide range of temperature. It was observed that dielectric
constant increases with the increase in temperature and decreases with
the increase in frequency. Dielectric loss was found to be quite low.
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